Infineon IKW15N120H3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 145-9239
- Mfr. Part No.:
- IKW15N120H3FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£104.10
(exc. VAT)
£124.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 - 30 | £3.47 | £104.10 |
60 - 120 | £3.297 | £98.91 |
150 + | £3.158 | £94.74 |
*price indicative
- RS Stock No.:
- 145-9239
- Mfr. Part No.:
- IKW15N120H3FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 30 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 217 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 16.03 x 5.16 x 21.1mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 217 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.03 x 5.16 x 21.1mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- CN
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.