Infineon FF150R12KE3GB2HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

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Subtotal (1 box of 10 units)*

£784.40

(exc. VAT)

£941.30

(inc. VAT)

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Per Box*
10 - 10£78.44£784.40
20 +£74.518£745.18

*price indicative

RS Stock No.:
124-8783
Mfr. Part No.:
FF150R12KE3GB2HOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

225 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

780 W

Package Type

62MM Module

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Switching Speed

1MHz

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 29mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

COO (Country of Origin):
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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