IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount
- RS Stock No.:
- 124-0710
- Mfr. Part No.:
- MIXA225PF1200TSF
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£106.01
(exc. VAT)
£127.21
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 14 July 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £106.01 |
| 5 - 9 | £103.25 |
| 10 - 24 | £100.59 |
| 25 + | £98.07 |
*price indicative
- RS Stock No.:
- 124-0710
- Mfr. Part No.:
- MIXA225PF1200TSF
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 360 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 1100 W | |
| Package Type | SimBus F | |
| Configuration | Dual | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 11 | |
| Transistor Configuration | Series | |
| Dimensions | 152 x 62 x 17mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 360 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 1100 W | ||
Package Type SimBus F | ||
Configuration Dual | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 11 | ||
Transistor Configuration Series | ||
Dimensions 152 x 62 x 17mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.