Semikron Danfoss SEMiX603GB12E4p Series IGBT Module, 1.1 kA 1200 V, 11-Pin SEMiX®3p, Through Hole
- RS Stock No.:
- 122-0393
- Mfr. Part No.:
- SEMiX603GB12E4p
- Brand:
- Semikron Danfoss
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Subtotal (1 unit)*
£406.10
(exc. VAT)
£487.32
(inc. VAT)
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In Stock
- 4 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 1 | £406.10 |
| 2 + | £397.98 |
*price indicative
- RS Stock No.:
- 122-0393
- Mfr. Part No.:
- SEMiX603GB12E4p
- Brand:
- Semikron Danfoss
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron Danfoss | |
| Maximum Continuous Collector Current | 1.1 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Configuration | Series | |
| Package Type | SEMiX®3p | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 11 | |
| Transistor Configuration | Series | |
| Dimensions | 150 x 62.4 x 17mm | |
| Minimum Operating Temperature | -40 °C | |
| Priced to Clear | Yes | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand Semikron Danfoss | ||
Maximum Continuous Collector Current 1.1 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Configuration Series | ||
Package Type SEMiX®3p | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 11 | ||
Transistor Configuration Series | ||
Dimensions 150 x 62.4 x 17mm | ||
Minimum Operating Temperature -40 °C | ||
Priced to Clear Yes | ||
Maximum Operating Temperature +175 °C | ||
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.