Infineon FZ600R12KS4HOSA1 Single IGBT Module, 700 A 1200 V AG-62MM-2, Panel Mount

Bulk discount available

Subtotal (1 unit)*

£127.74

(exc. VAT)

£153.29

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 18 unit(s) ready to ship
  • Plus 120 unit(s) shipping from 23 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£127.74
2 - 4£121.35
5 +£116.24

*price indicative

RS Stock No.:
111-6096
Mfr. Part No.:
FZ600R12KS4HOSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

700 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

3.9 kW

Configuration

Single

Package Type

AG-62MM-2

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

Single

Dimensions

106.4 x 61.4 x 36.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.