Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 110-7724P
- Mfr. Part No.:
- IKP15N65F5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£49.15
(exc. VAT)
£58.975
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 475 unit(s) shipping from 27 October 2025
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Units | Per unit |
|---|---|
| 25 - 45 | £1.966 |
| 50 - 120 | £1.884 |
| 125 - 245 | £1.76 |
| 250 + | £1.656 |
*price indicative
- RS Stock No.:
- 110-7724P
- Mfr. Part No.:
- IKP15N65F5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 105 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.36 x 4.57 x 15.95mm | |
| Energy Rating | 0.17mJ | |
| Minimum Operating Temperature | -40 °C | |
| Gate Capacitance | 930pF | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 105 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.36 x 4.57 x 15.95mm | ||
Energy Rating 0.17mJ | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 930pF | ||
Maximum Operating Temperature +175 °C | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.