Starpower DG75A08TDFQ Single Plus IGBT IGBT, 75 A 750 V, 4-Pin TO-247PLUS-4L, Through Hole
- RS Stock No.:
- 427-754
- Mfr. Part No.:
- DG75A08TDFQ
- Brand:
- Starpower
Bulk discount available
Subtotal (1 pack of 2 units)*
£6.28
(exc. VAT)
£7.54
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,998 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.14 | £6.28 |
| 20 - 198 | £2.825 | £5.65 |
| 200 - 998 | £2.61 | £5.22 |
| 1000 - 1998 | £2.42 | £4.84 |
| 2000 + | £2.03 | £4.06 |
*price indicative
- RS Stock No.:
- 427-754
- Mfr. Part No.:
- DG75A08TDFQ
- Brand:
- Starpower
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 750 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 378 W | |
| Number of Transistors | 1 | |
| Configuration | Single Plus IGBT | |
| Package Type | TO-247PLUS-4L | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 4 | |
Select all | ||
|---|---|---|
Brand Starpower | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 750 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 378 W | ||
Number of Transistors 1 | ||
Configuration Single Plus IGBT | ||
Package Type TO-247PLUS-4L | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 4 | ||
- COO (Country of Origin):
- CN
The Starpower IGBT Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as solar power.
Low switching loss
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Very low reverse recovery loss based on SiC diode
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Very low reverse recovery loss based on SiC diode