Infineon FF2400R12IP7BPSA1 Half Bridge IGBT, 2.4 kA 1200 V, Screw Mount
- RS Stock No.:
- 349-362
- Mfr. Part No.:
- FF2400R12IP7BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£1,056.10
(exc. VAT)
£1,267.32
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2 unit(s) ready to ship
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Units | Per unit |
---|---|
1 + | £1,056.10 |
*price indicative
- RS Stock No.:
- 349-362
- Mfr. Part No.:
- FF2400R12IP7BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 2.4 kA | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 2 | |
Maximum Power Dissipation | 20 mW | |
Configuration | Half Bridge | |
Mounting Type | Screw Mount | |
Channel Type | N | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 2.4 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 3+ Dual IGBT Module with TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, and NTC is designed for ultra-high power applications, providing superior performance and efficiency. It offers the highest power density, optimizing both space and power handling for demanding industrial uses. The module features best-in-class VCEsat, delivering low saturation voltage to maximize efficiency and minimize energy losses.
Increase in power density
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing