STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

View all IGBTs
Bulk discount available

Subtotal 10 units (supplied on a continuous strip)*

£25.20

(exc. VAT)

£30.20

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 595 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
10 - 99£2.52
100 +£2.32

*price indicative

Packaging Options:
RS Stock No.:
285-638P
Mfr. Part No.:
STGHU30M65DF2AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

84 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

441 W

Configuration

Dual Gate

Package Type

HU3PAK

Mounting Type

Surface Mount

Pin Count

7

This STMicroelectronics device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
6 μs of minimum short circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin