STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs

Subtotal 1 unit (supplied in a tube)*

£4.41

(exc. VAT)

£5.29

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 25 unit(s) shipping from 06 October 2025
  • Plus 999,999,974 unit(s) shipping from 09 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£4.41

*price indicative

Packaging Options:
RS Stock No.:
215-009P
Mfr. Part No.:
STGWA50M65DF2AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

119 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

576 W

Configuration

Single

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Minimized tail current
Tight parameter distribution
Safer paralleling