The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Attribute
Value
Maximum Continuous Collector Current
1 kA
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
625 kW
Package Type
PrimePACK3
Configuration
Series
Mounting Type
Screw Mount
Channel Type
N
Pin Count
10
Transistor Configuration
Series
Dimensions
250 x 89 x 38mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
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