Fuji Electric 1MBi200U4H-120L-50, M259 , N-Channel IGBT Module, 200 A max, 1200 V, Panel Mount

  • RS Stock No. 747-1119
  • Mfr. Part No. 1MBi200U4H-120L-50
  • Brand Fuji Electric
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

IGBT Modules 1-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Single
Configuration Single
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M259
Pin Count 7
Maximum Power Dissipation 1.04 kW
Dimensions 108 x 62 x 30mm
Height 30mm
Length 108mm
Maximum Operating Temperature +150 °C
Width 62mm
17 In stock - FREE next working day delivery available
Price Each
£ 38.91
(exc. VAT)
£ 46.69
(inc. VAT)
Units
Per unit
1 +
£38.91
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