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MPN

Fuji Electric 2MBi600VE-120-50, M277 , N-Channel Series IGBT Module, 700 A max, 1200 V, Panel Mount


Available to back order for despatch when stock is available
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Price Each

£243.18

(exc. VAT)

£291.82

(inc. VAT)

Units

Added

RS Stock No.:
747-1109
Mfr. Part No.:
2MBi600VE-120-50
Brand:
Fuji Electric
UnitsPer unit
1 - 4£243.18
5 - 9£218.86
10 - 24£209.13
25 +£201.84

IGBT Modules 2-Pack, Fuji Electric


V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT


IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

AttributeValue
ConfigurationSeries
Transistor ConfigurationSeries
Maximum Continuous Collector Current700 A
Maximum Collector Emitter Voltage1200 V
Maximum Gate Emitter Voltage±20V
Channel TypeN
Mounting TypePanel Mount
Package TypeM277
Pin Count7
Maximum Power Dissipation4.8 kW
Dimensions110 x 80 x 30mm
Height30mm
Length110mm
Maximum Operating Temperature+150 °C
Width80mm