Infineon FS25R12W1T4B11BOMA1 Common Collector IGBT Module, 45 A 1200 V, 22-Pin EASY1B, PCB Mount
- RS Stock No.:
- 168-8769
- Mfr. Part No.:
- FS25R12W1T4B11BOMA1
- Brand:
- Infineon
Available to back order for despatch 30/06/2025
Added
Price Each (In a Box of 24)
£27.67
(exc. VAT)
£33.20
(inc. VAT)
| Units | Per unit | Per Box* |
| 24 - 24 | £27.67 | £664.08 |
| 48 + | £26.287 | £630.888 |
| *price indicative | ||
- RS Stock No.:
- 168-8769
- Mfr. Part No.:
- FS25R12W1T4B11BOMA1
- Brand:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 45 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 205 W |
| Package Type | EASY1B |
| Configuration | Common Collector |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 22 |
| Switching Speed | 1MHz |
| Transistor Configuration | 3 Phase |
| Dimensions | 48 x 33.8 x 12mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +150 °C |