Fuji Electric 6MBI150U4B-120-50 3 Phase Bridge IGBT Module, 150 A 1200 V, 35-Pin M633, PCB Mount
- RS Stock No.:
- 462-940
- Mfr. Part No.:
- 6MBI150U4B-120-50
- Brand:
- Fuji Electric
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Each
£118.40
(exc. VAT)
£142.08
(inc. VAT)
- RS Stock No.:
- 462-940
- Mfr. Part No.:
- 6MBI150U4B-120-50
- Brand:
- Fuji Electric
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fuji Electric | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 735 W | |
| Package Type | M633 | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 35 | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 122 x 62 x 17mm | |
| Maximum Operating Temperature | +150 °C | |
| Priced to Clear | Yes | |
| Select all | ||
|---|---|---|
Brand Fuji Electric | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 735 W | ||
Package Type M633 | ||
Configuration 3 Phase Bridge | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 35 | ||
Transistor Configuration 3 Phase | ||
Dimensions 122 x 62 x 17mm | ||
Maximum Operating Temperature +150 °C | ||
Priced to Clear Yes | ||
- COO (Country of Origin):
- JP
IGBT Modules 6-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
Note
Maximum collector current (Ic) values are stated per transistor within the module.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.