Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in half bridge configurations.

This MOSFET gate driver is designed for efficient control of power electronic circuits, specifically in half-bridge applications. The device operates with high voltage tolerance up to 600V, suitable for use in various automated systems. It features robust construction employing CMOS technology, which enhances reliability in demanding environments.

• Delivers peak output current of 0.5A for efficient switching
• Floating channel functionality enables bootstrap operation for enhanced performance
• Undervoltage lockout safeguards against low supply conditions
• Matched propagation delays ensure synchronised operation of output channels
• Internal deadtime prevents shoot-through, increasing system efficiency

• Ideal for driving high-side and low-side MOSFETs in half-bridge configurations
• Suitable for synchronised switching in power converters
• Utilised in industrial automation systems requiring high-speed control
• Effective in motor drive

The compatible supply voltage range for this device is from 10V to 20V, allowing flexibility in various applications.

It includes internally set deadtime features that manage the timing between high-side and low-side drivers, effectively preventing shoot-through in half-bridge applications.

The floating channel allows for bootstrap operation, enabling the driver to control high-side MOSFETs effectively, which is critical in high-voltage applications.

MOSFET & IGBT Drivers, Infineon (International Rectifier)