Renesas Electronics HIP2210FRTZ MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC
- RS Stock No.:
- 264-3550P
- Mfr. Part No.:
- HIP2210FRTZ
- Brand:
- Renesas Electronics
Bulk discount available
View bulk pricing optionsSubtotal 25 units (supplied in a tube)*
£30.65
(exc. VAT)
£36.775
(inc. VAT)
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- Shipping from 04 January 2027
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Units | Per unit |
|---|---|
| 25 - 45 | £1.226 |
| 50 - 95 | £1.204 |
| 100 - 245 | £1.034 |
| 250 + | £0.982 |
*price indicative
- RS Stock No.:
- 264-3550P
- Mfr. Part No.:
- HIP2210FRTZ
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 1.69mA | |
| Pin Count | 10 | |
| Fall Time | 790ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Rise Time | 20ns | |
| Minimum Supply Voltage | 100V | |
| Maximum Supply Voltage | 100V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Series | HIP2210 | |
| Width | 4 mm | |
| Height | 1.75mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 1.69mA | ||
Pin Count 10 | ||
Fall Time 790ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Rise Time 20ns | ||
Minimum Supply Voltage 100V | ||
Maximum Supply Voltage 100V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Series HIP2210 | ||
Width 4 mm | ||
Height 1.75mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Renesas Electronics high-frequency half-bridge NMOS FET drivers. This is a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to
18V and integrated high-side bootstrap diodecsupports driving the high-side and low-side NMOS in 100V half-bridge applications.
Integrated 0.5Ω typical bootstrap diode
Robust noise tolerance
VDD and boot undervoltage lockout