Renesas Electronics HIP2101EIBZ MOSFET Gate Driver, 3 A 8-Pin 100 V, SOIC
- RS Stock No.:
- 264-0589
- Mfr. Part No.:
- HIP2101EIBZ
- Brand:
- Renesas Electronics
Bulk discount available
Subtotal (1 pack of 2 units)*
£7.76
(exc. VAT)
£9.32
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 904 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.88 | £7.76 |
| 10 - 48 | £3.49 | £6.98 |
| 50 - 98 | £3.30 | £6.60 |
| 100 - 248 | £2.85 | £5.70 |
| 250 + | £2.71 | £5.42 |
*price indicative
- RS Stock No.:
- 264-0589
- Mfr. Part No.:
- HIP2101EIBZ
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 3A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 10ns | |
| Driver Type | MOSFET | |
| Rise Time | 10ns | |
| Minimum Supply Voltage | 100V | |
| Maximum Supply Voltage | 100V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Height | 1.7mm | |
| Series | HIP2101 | |
| Width | 3.98 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 3A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 10ns | ||
Driver Type MOSFET | ||
Rise Time 10ns | ||
Minimum Supply Voltage 100V | ||
Maximum Supply Voltage 100V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Height 1.7mm | ||
Series HIP2101 | ||
Width 3.98 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Renesas Electronics gate drivers is a high frequency half-bridge NMOS FET driver with a tri-level PWM input with an operating supply and integrated high-side bootstrap bias, it supports driving the high-side and low-side NMOS in halfbridge applications.
Programmable dead-time prevents shoot-through
Bi-directional converter
Related links
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