Infineon IR21084STRPBF, Gate Driver 2, 350 mA 14-Pin 20V, 14LD SOIC
- RS Stock No.:
- 262-6223
- Distrelec Article No.:
- 304-41-654
- Mfr. Part No.:
- IR21084STRPBF
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
£3.36
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£4.04
(inc. VAT)
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In Stock
- Plus 2,288 unit(s) shipping from 03 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.68 | £3.36 |
| 20 - 48 | £1.515 | £3.03 |
| 50 - 98 | £1.41 | £2.82 |
| 100 - 198 | £1.305 | £2.61 |
| 200 + | £1.23 | £2.46 |
*price indicative
- RS Stock No.:
- 262-6223
- Distrelec Article No.:
- 304-41-654
- Mfr. Part No.:
- IR21084STRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 350mA | |
| Pin Count | 14 | |
| Package Type | 14LD SOIC | |
| Fall Time | 80ns | |
| Driver Type | Gate Driver | |
| Rise Time | 150ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 350mA | ||
Pin Count 14 | ||
Package Type 14LD SOIC | ||
Fall Time 80ns | ||
Driver Type Gate Driver | ||
Rise Time 150ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon half bridge gate driver IC is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N channel power MOSFET or IGBT in the high side configuration.
Under voltage lockout
Matched propagation delay for both channels
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