Infineon MOSFET Gate Driver, 20 A 25-Pin 16 V, PQFN
- RS Stock No.:
- 258-4041
- Mfr. Part No.:
- TDA21520AUMA1
- Brand:
- Infineon
Subtotal (1 reel of 6000 units)*
£7,800.00
(exc. VAT)
£9,360.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 6000 + | £1.30 | £7,800.00 |
*price indicative
- RS Stock No.:
- 258-4041
- Mfr. Part No.:
- TDA21520AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 20A | |
| Pin Count | 25 | |
| Package Type | PQFN | |
| Driver Type | MOSFET | |
| Minimum Supply Voltage | 4.25V | |
| Maximum Supply Voltage | 16V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | Lead free RoHS package | |
| Height | 0.9mm | |
| Length | 4mm | |
| Width | 5 mm | |
| Series | TDA21520 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 20A | ||
Pin Count 25 | ||
Package Type PQFN | ||
Driver Type MOSFET | ||
Minimum Supply Voltage 4.25V | ||
Maximum Supply Voltage 16V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals Lead free RoHS package | ||
Height 0.9mm | ||
Length 4mm | ||
Width 5 mm | ||
Series TDA21520 | ||
Automotive Standard No | ||
The Infineon OptiMOS power stage is integrated power-stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low Vsd similar to a Schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages. The internal MOSFET sensing achieves superior current sense accuracy vs best-in-class controller-based Inductor DCR sense methods.
High-side MOSFET short detection and flag
Thermal shutdown
Cycle-by-cycle over current protection and fault flag
Auto-sleep and deep-sleep mode for power saving
Compatible with 3.3-V tristate PWM input
Accurate current reporting to improve system level performance
Current and temperature fault monitoring for a more robust system
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