Infineon High Side Gate Driver, 1.8 A 8-Pin 600 V, SOIC
- RS Stock No.:
- 258-4009
- Mfr. Part No.:
- IRS2181STRPBF
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£1,407.50
(exc. VAT)
£1,690.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 09 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.563 | £1,407.50 |
*price indicative
- RS Stock No.:
- 258-4009
- Mfr. Part No.:
- IRS2181STRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 1.8A | |
| Pin Count | 8 | |
| Fall Time | 20ns | |
| Package Type | SOIC | |
| Driver Type | High Side | |
| Rise Time | 60ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | IRS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 1.8A | ||
Pin Count 8 | ||
Fall Time 20ns | ||
Package Type SOIC | ||
Driver Type High Side | ||
Rise Time 60ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series IRS | ||
Automotive Standard No | ||
The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
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