The Infineon high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant