The Infineon high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 V or 600 V.

Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
3.3 V logic compatible
Separate logic supply range from 3.3 V to 20 V
Logic and power ground ± 5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs