The Infineon half bridge gate driver is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions.

Maximum supply voltage of 25 V
Dual package options of DSO-8 and DSO-14
High and low voltage pins separated for maximum creep age and clearance
Separate logic and power ground with the 2ED21094S06J version
Shutdown input turns off both channels