The Infineon has automotive qualified single channel high voltage gate driver optimized for SiC MOSFET. The 1EDI3030AS uses robust Infineon coreless transformer technology to provide bi-directional signal transfer across the galvanic isolation barrier. The compact package design and high level of feature integration save valuable PCB space and system cost, while pre-configured settings reduce design efforts.

For SiC-MOSFETs up to 1200 V
Propagation delay 60 ns typical
Redundant DESAT and OCP protection
Gate and output stage monitoring