The ON Semiconductor series NCD57090E are high−current single channel IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090E). NCD57090E accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V.

Improves system efficiency
Short Propagation Delays with Accurate Matching
Improves PWM signal integrity
High Transient & Electromagnetic Immunity
Ruggedness in fast slew rate high voltage and high current switching applications
5 KVrms On-Chip Galvanic Isolation
Saves cost and board space while offering improved performance compared to opto-drivers
Wide Bias Voltage Ranges and Input Voltage Range
Offers system design flexibility and allows the usage of commonly available system voltage rails
Active Miller Clamp or Negative Gate Voltage or Split Outputs
Offers a choice in selecting the right feature in a compact package