MOSFET & IGBT Gate Drivers, High and Low Side, Infineon
Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in high-side and low-side configurations.
200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.
Summary of Features: Floating Channel designed for bootstrap operation, dV/dt immune Fully operational to 200 V Tolerant to negative transient voltage Tolerant to negative tansient voltage dV/dt immune Gate drive supply range from 10 V to 20 V Independent low and high side channels Input logic HIN/LIN active high Undervoltage lockout for both channels 3.3 V and 5 V input logic compatible CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels
MOSFET & IGBT Drivers, Infineon (International Rectifier)