A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.

The Texas Instruments dual gate driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced

Independently Drives Two N-Channel MOSFETs
Compound CMOS and Bipolar Outputs Reduce Output Current Variation
5-A Sink and 3-A Source Current Capability
Two Channels can be Connected in Parallel to Double the Drive Current
Independent Inputs (TTL Compatible)
Fast Propagation Times (25 ns Typical)
Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
Available in Dual Noninverting, Dual Inverting and Combination Configurations
Supply Rail Under voltage Lockout Protection (UVLO)ƒ
LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
Pin Compatible With Industry Standard Gate Drivers

MOSFET & IGBT Drivers, Texas Instruments