STMicroelectronics MASTERGAN6TR, High Voltage 2, 16 A 35-Pin 21V, QFN
- RS Stock No.:
- 760-665
- Mfr. Part No.:
- MASTERGAN6TR
- Brand:
- STMicroelectronics
Subtotal (1 reel of 3000 units)*
£10,347.00
(exc. VAT)
£12,417.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 08 July 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £3.449 | £10,347.00 |
*price indicative
- RS Stock No.:
- 760-665
- Mfr. Part No.:
- MASTERGAN6TR
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Gate Driver | |
| Output Current | 16A | |
| Pin Count | 35 | |
| Fall Time | 4ns | |
| Package Type | QFN | |
| Driver Type | High Voltage | |
| Number of Outputs | 2 | |
| Rise Time | 4ns | |
| Minimum Supply Voltage | 7.5V | |
| Maximum Supply Voltage | 21V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 9 mm | |
| Height | 1mm | |
| Length | 9mm | |
| Series | MASTERGAN6 | |
| Mount Type | Surface Mount | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Gate Driver | ||
Output Current 16A | ||
Pin Count 35 | ||
Fall Time 4ns | ||
Package Type QFN | ||
Driver Type High Voltage | ||
Number of Outputs 2 | ||
Rise Time 4ns | ||
Minimum Supply Voltage 7.5V | ||
Maximum Supply Voltage 21V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Width 9 mm | ||
Height 1mm | ||
Length 9mm | ||
Series MASTERGAN6 | ||
Mount Type Surface Mount | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver. The integrated power GaNs have typical RDS(ON) of 140 mΩ and 650 V drain source blocking voltage. It features linear regulators on both the lower and upper driving sections to optimize driving efficiency. The high side of the embedded gate driver can be supplied by the integrated bootstrap diode. The interlocking function avoids cross-conduction conditions. The Advanced driver section, thanks to small propagation delay, very short wake-up time, and short, minimum on-times, enables high frequency switching operation. The extended range of input pins as well as the remote signalling pin (FLT) allow easy interfacing with controllers, microcontrollers, or DSP units. The standby pin allows to reduce the power consumption of the device during inactive periods.
Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gate driver
140 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 10 A
Linear regulators to regulate high-side and low-side driver supply voltage
Overall drivers propagation delay of 45 ns and 35 ns minimum Pulse
Very fast wake-up time of high-side driver
Externally adjustable turn-on resistors
UVLO protection on VCC and high-side driver supply voltage
Interlocking function
Dedicated pins for standby and shutdown with fault pin for remote signal
3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
Thermal shutdown protection
