onsemi NCP51752CDDR2G MOSFET Gate Driver 1, 9 A 8-Pin 20 V, SOIC-8 NB
- RS Stock No.:
- 220-558
- Mfr. Part No.:
- NCP51752CDDR2G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 5 units)*
£13.85
(exc. VAT)
£16.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,500 unit(s) shipping from 21 January 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | £2.77 | £13.85 |
| 50 - 95 | £2.634 | £13.17 |
| 100 - 495 | £2.438 | £12.19 |
| 500 - 995 | £2.242 | £11.21 |
| 1000 + | £2.16 | £10.80 |
*price indicative
- RS Stock No.:
- 220-558
- Mfr. Part No.:
- NCP51752CDDR2G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Output Current | 9A | |
| Pin Count | 8 | |
| Package Type | SOIC-8 NB | |
| Fall Time | 8.3ns | |
| Number of Outputs | 1 | |
| Driver Type | MOSFET | |
| Rise Time | 22ns | |
| Minimum Supply Voltage | 3V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Series | NCP51752 | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | AEC-Q100-011, GB4943.1-2011, IEC 62386-1, UL1577 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Output Current 9A | ||
Pin Count 8 | ||
Package Type SOIC-8 NB | ||
Fall Time 8.3ns | ||
Number of Outputs 1 | ||
Driver Type MOSFET | ||
Rise Time 22ns | ||
Minimum Supply Voltage 3V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Series NCP51752 | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals AEC-Q100-011, GB4943.1-2011, IEC 62386-1, UL1577 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Isolated single−channel gate driver with 4.5 A/9 A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches.
Minimum CMTI of 200 V/ns dV/dt
Negative 5−V Handling Capability on Input Pins
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