Hutchinson Le Joint Français NBR O-Ring O-Ring, 11.8mm Bore, 16.8mm Outer Diameter

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

The Hutchinson Le Joint Français O-Ring is a circular ring with a round cross-section, representing the simplest sealing system. It fits into a groove that is easy to machine, compact in size, and symmetrical, reducing the risk of incorrect fitting. O-Rings are low cost and suitable for applications across a wide temperature range.

Good resistance to mineral oils and household gases
Good mechanical behaviour
Good impermeability
Typical uses include hydraulic and pneumatic systems, and valves and fittings for water and mineral gas

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.