Hutchinson Le Joint Français EPDM O-Ring O-Ring, 11.8mm Bore, 16.8mm Outer Diameter
- RS Stock No.:
- 581-862
- Mfr. Part No.:
- 111511
- Brand:
- Hutchinson Le Joint Français
Subtotal (1 bag of 10 units)*
£6.53
(exc. VAT)
£7.84
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 21 November 2025
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Bag(s) | Per Bag | Per unit* |
---|---|---|
1 + | £6.53 | £0.653 |
*price indicative
- RS Stock No.:
- 581-862
- Mfr. Part No.:
- 111511
- Brand:
- Hutchinson Le Joint Français
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Hutchinson Le Joint Français | |
Type | O-Ring | |
Material | EPDM | |
Inside Diameter | 11.8mm | |
Outside Diameter | 16.8mm | |
Select all | ||
---|---|---|
Brand Hutchinson Le Joint Français | ||
Type O-Ring | ||
Material EPDM | ||
Inside Diameter 11.8mm | ||
Outside Diameter 16.8mm | ||
- COO (Country of Origin):
- FR
Discrete IGBTs, Fairchild Semiconductor
The Hutchinson Le Joint Français O-Ring is a circular ring with a round cross-section, representing the simplest sealing system. It fits into a groove that is easy to machine, compact in size, and symmetrical, reducing the risk of incorrect fitting. O-Rings are low cost and suitable for applications across a wide temperature range.
Made of EPDM
Very good resistance from water and steam
Very good resistance from synthetic brake fluid and atmospheric agents
Quite good mechanical behaviour
Very good resistance from water and steam
Very good resistance from synthetic brake fluid and atmospheric agents
Quite good mechanical behaviour
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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