The Infineon FRAM Memory is a 1 Mbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories.

RoHS compliant
Low voltage operation
Low power consumption
Fast 2 wire serial interface
Supports legacy timings for 100 kHz and 400 kHz