Infineon 2Mbit Parallel FRAM Memory 44-Pin TSOP, FM28V202A-TG
- RS Stock No.:
- 188-5427
- Mfr. Part No.:
- FM28V202A-TG
- Brand:
- Cypress Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 188-5427
- Mfr. Part No.:
- FM28V202A-TG
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 2Mbit | |
| Organisation | 128k x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 60ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.51 x 10.26 x 1.04mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Words | 128k | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 2Mbit | ||
Organisation 128k x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 60ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.51 x 10.26 x 1.04mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Words 128k | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- US
2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K x 16
Configurable as 256 K x 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and Endurance table)
NoDelay™ writes
Page mode operation to 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128 K x 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
44-pin thin small outline package (TSOP) Type II
Configurable as 256 K x 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and Endurance table)
NoDelay™ writes
Page mode operation to 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128 K x 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
44-pin thin small outline package (TSOP) Type II