Infineon 1Mbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24V10-G

View all FRAM Memory
Bulk discount available

Subtotal 10 units (supplied in a tube)*

£103.00

(exc. VAT)

£123.60

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 278 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
10 - 49£10.30
50 - 99£10.03
100 - 499£9.77
500 +£9.53

*price indicative

Packaging Options:
RS Stock No.:
125-4215P
Mfr. Part No.:
FM24V10-G
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Memory Size

1Mbit

Organisation

128K x 8 bit

Interface Type

Serial-2 Wire, Serial-I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.48mm

Maximum Operating Temperature

+85 °C

Number of Words

128K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire Serial interface (I2C)
Up to 3.4-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Serial Number (FM24VN10)
Low power consumption
175 μA active current at 100 kHz
90 μA (typ) standby current
5 μA (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Related links