Infineon 64kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24CL64B-G

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Subtotal 10 units (supplied in a tube)*

£14.65

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£17.58

(inc. VAT)

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Per unit
10 - 38£1.465
40 - 98£1.395
100 +£1.30

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Packaging Options:
RS Stock No.:
125-4213P
Mfr. Part No.:
FM24CL64B-G
Brand:
Infineon
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Brand

Infineon

Memory Size

64kbit

Organisation

8K x 8 bit

Interface Type

Serial-2 Wire, Serial-I2C

Data Bus Width

8bit

Maximum Random Access Time

550ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Width

3.98mm

Maximum Operating Supply Voltage

3.65 V

Height

1.48mm

Maximum Operating Temperature

+85 °C

Minimum Operating Temperature

-40 °C

Automotive Standard

AEC-Q100

Number of Words

8K

Minimum Operating Supply Voltage

2.7 V

Number of Bits per Word

8bit

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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