Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
- RS Stock No.:
- 124-2989P
- Mfr. Part No.:
- FM25V20A-DG
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£126.80
(exc. VAT)
£152.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 14 October 2026
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Units | Per unit |
|---|---|
| 10 - 24 | £12.68 |
| 25 - 99 | £12.34 |
| 100 - 499 | £12.03 |
| 500 + | £11.74 |
*price indicative
- RS Stock No.:
- 124-2989P
- Mfr. Part No.:
- FM25V20A-DG
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 2Mbit | |
| Organisation | 256K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mounting Type | Surface Mount | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Dimensions | 5 x 6 x 0.7mm | |
| Length | 6mm | |
| Width | 5mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 0.7mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 256K | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 2Mbit | ||
Organisation 256K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type DFN | ||
Pin Count 8 | ||
Dimensions 5 x 6 x 0.7mm | ||
Length 6mm | ||
Width 5mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 0.7mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 256K | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.