Infineon 64kbit Parallel FRAM Memory 28-Pin SOIC, FM16W08-SG
- RS Stock No.:
- 124-2979
- Mfr. Part No.:
- FM16W08-SG
- Brand:
- Cypress Semiconductor
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 124-2979
- Mfr. Part No.:
- FM16W08-SG
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 64kbit | |
| Organisation | 8K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 28 | |
| Dimensions | 18.11 x 7.62 x 2.37mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 8K | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 64kbit | ||
Organisation 8K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 28 | ||
Dimensions 18.11 x 7.62 x 2.37mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 8K | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2.7 V | ||
Minimum Operating Temperature -40 °C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 8 K x 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 8 K x 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.