Ramtron International Corp 256kbit SPI FRAM Memory 8-Pin SOIC, FM25L256B-G
- RS Stock No.:
- 394-914
- Mfr. Part No.:
- FM25L256B-G
- Brand:
- Ramtron International Corp
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 394-914
- Mfr. Part No.:
- FM25L256B-G
- Brand:
- Ramtron International Corp
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Ramtron International Corp | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 22ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.9 x 3.9 x 1.5mm | |
| Length | 4.9mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 3.9mm | |
| Height | 1.5mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Ramtron International Corp | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 22ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.9 x 3.9 x 1.5mm | ||
Length 4.9mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 3.9mm | ||
Height 1.5mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Minimum Operating Temperature -40 °C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.