Ruland Jaw, 57.2mm Outside Diameter, 18mm Bore, 80mm Length Flexible Coupling

Subtotal (1 unit)*

£111.75

(exc. VAT)

£134.10

(inc. VAT)

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RS Stock No.:
603-490
Mfr. Part No.:
MJSC57-18-A
Brand:
Ruland
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Brand

Ruland

Coupling Types

Jaw

Bore

18mm

Outside Diameter

57.2mm

Length

80mm

Fastening Type

Set Screw

Torque Rating

17Nm

COO (Country of Origin):
US

IGBT Modules, Vishay


Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

The Ruland Set Screw Zero-Backlash Jaw Coupling Hub is a component in a three-piece design consisting of two aluminum hubs and an elastomeric insert called the spider. It creates a lightweight, low inertia coupling capable of speeds up to 8,000 RPM. This design offers a highly customizable solution that easily integrates clamp or set screw hubs with inch, metric, keyed, and keyless bores.

Balanced design for reduced vibration at high speeds
Machined from bar stock that is sourced exclusively from North American mills
RoHS compliant
REACH compliant
Zero backlash


IGBT Modules, Vishay


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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