Infineon NOR 256Mbit CFI Flash Memory 56-Pin TSOP, S29GL256P11TFI020
- RS Stock No.:
- 193-8869
- Mfr. Part No.:
- S29GL256P11TFI020
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 193-8869
- Mfr. Part No.:
- S29GL256P11TFI020
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256Mbit | |
| Interface Type | CFI | |
| Package Type | TSOP | |
| Pin Count | 56 | |
| Organisation | 32M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Dimensions | 18.5 x 14.1 x 1.05mm | |
| Number of Bits per Word | 8bit | |
| Number of Words | 32M | |
| Maximum Random Access Time | 110ns | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256Mbit | ||
Interface Type CFI | ||
Package Type TSOP | ||
Pin Count 56 | ||
Organisation 32M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Dimensions 18.5 x 14.1 x 1.05mm | ||
Number of Bits per Word 8bit | ||
Number of Words 32M | ||
Maximum Random Access Time 110ns | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- TH
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.