Winbond SLC NAND 2Gbit Parallel Flash Memory 63-Pin VFBGA, W29N02GWBIBA
- RS Stock No.:
- 188-2559
- Mfr. Part No.:
- W29N02GWBIBA
- Brand:
- Winbond
Stock information currently inaccessible
- RS Stock No.:
- 188-2559
- Mfr. Part No.:
- W29N02GWBIBA
- Brand:
- Winbond
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Winbond | |
| Memory Size | 2Gbit | |
| Interface Type | Parallel | |
| Package Type | VFBGA | |
| Pin Count | 63 | |
| Organisation | 256M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | SLC NAND | |
| Minimum Operating Supply Voltage | 1.7 V | |
| Maximum Operating Supply Voltage | 1.95 V | |
| Dimensions | 11.1 x 9.1 x 0.6mm | |
| Maximum Random Access Time | 25µs | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 256M | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Select all | ||
|---|---|---|
Brand Winbond | ||
Memory Size 2Gbit | ||
Interface Type Parallel | ||
Package Type VFBGA | ||
Pin Count 63 | ||
Organisation 256M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type SLC NAND | ||
Minimum Operating Supply Voltage 1.7 V | ||
Maximum Operating Supply Voltage 1.95 V | ||
Dimensions 11.1 x 9.1 x 0.6mm | ||
Maximum Random Access Time 25µs | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 256M | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Density : 2Gbit (Single chip solution)
Vcc : 1.7V to 1.95V
Bus width : x8 x16
Operating temperature
Industrial: -40°C to 85°C
Industrial Plus: -40°C to 105°C
Single-Level Cell (SLC) technology.
Organization
Density: 2G-bit/256M-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command
Additional command support
Copy Back
Two-plane operation
Contact Winbond for OTP f
Contact Winbond for Block
Lowest power consumption
Read: 13mA(typ.)
Program/Erase: 10mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
Vcc : 1.7V to 1.95V
Bus width : x8 x16
Operating temperature
Industrial: -40°C to 85°C
Industrial Plus: -40°C to 105°C
Single-Level Cell (SLC) technology.
Organization
Density: 2G-bit/256M-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command
Additional command support
Copy Back
Two-plane operation
Contact Winbond for OTP f
Contact Winbond for Block
Lowest power consumption
Read: 13mA(typ.)
Program/Erase: 10mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x16
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area