Cypress Semiconductor NOR 512Mbit CFI Flash Memory 64-Pin BGA (LAA064), S29GL512T10FHI010

47 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
Versatile I/O feature
Wide I/O voltage range (VIO): 1.65 V to VCC
x8/x16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
Programming in multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Automatic Error Checking and Correction (ECC) — internal hardware ECC with single bit error correction
Sector Erase
Uniform 128-KB sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling, and Ready/Busy pin methods to determine device status
Advanced Sector Protection (ASP)
Volatile and non-volatile protection methods for each sector
Separate 2048-byte One-Time Program (OTP) array
Four lockable regions (SSR0 - SSR3)
SSR0 is Factory Locked
SSR3 is Password Read Protect
Common Flash Interface (CFI) parameter table
Temperature Range / Grade:
Industrial (-40°C to +85°C)
Industrial Plus (-40°C to +105°C)
Extended (-40°C to +125°C)
100,000 Program / Erase Cycles
20-year data retention
Packaging Options
56-pin TSOP
64-ball LAA Fortified BGA, 13 mm x 11 mm
64-ball LAE Fortified BGA, 9 mm x 9 mm
56-ball VBU Fortified BGA, 9 mm x 7 mm