Cypress Semiconductor NOR 256Mbit CFI Flash Memory 56-Pin TSOP, S29GL256P11TFIV20
- RS Stock No.:
- 182-3340
- Mfr. Part No.:
- S29GL256P11TFIV20
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 182-3340
- Mfr. Part No.:
- S29GL256P11TFIV20
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 256Mbit | |
| Interface Type | CFI | |
| Package Type | TSOP | |
| Pin Count | 56 | |
| Organisation | 32M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Dimensions | 18.5 x 14.1 x 1.05mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 32M | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 110ns | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 256Mbit | ||
Interface Type CFI | ||
Package Type TSOP | ||
Pin Count 56 | ||
Organisation 32M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Dimensions 18.5 x 14.1 x 1.05mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 32M | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 110ns | ||
- COO (Country of Origin):
- US
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.