Cypress Semiconductor NOR 128Mbit CFI Flash Memory 56-Pin TSOP, S29GL128S10TFI010
- RS Stock No.:
- 181-8419
- Mfr. Part No.:
- S29GL128S10TFI010
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 181-8419
- Mfr. Part No.:
- S29GL128S10TFI010
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 128Mbit | |
| Interface Type | CFI | |
| Package Type | TSOP | |
| Pin Count | 56 | |
| Organisation | 16M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Dimensions | 18.5 x 14.1 x 1.05mm | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 16M | |
| Maximum Random Access Time | 100ns | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 128Mbit | ||
Interface Type CFI | ||
Package Type TSOP | ||
Pin Count 56 | ||
Organisation 16M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Dimensions 18.5 x 14.1 x 1.05mm | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 16M | ||
Maximum Random Access Time 100ns | ||
The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective Programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.