Cypress Semiconductor NOR 32Mbit Parallel Flash Memory 48-Pin TSOP, S29JL032J70TFI310
- RS Stock No.:
- 181-8262
- Mfr. Part No.:
- S29JL032J70TFI310
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 181-8262
- Mfr. Part No.:
- S29JL032J70TFI310
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 32Mbit | |
| Interface Type | Parallel | |
| Package Type | TSOP | |
| Pin Count | 48 | |
| Organisation | 4M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Dimensions | 18.4 x 12 x 1.05mm | |
| Number of Words | 4M | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 32Mbit | ||
Interface Type Parallel | ||
Package Type TSOP | ||
Pin Count 48 | ||
Organisation 4M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Dimensions 18.4 x 12 x 1.05mm | ||
Number of Words 4M | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Performance Characteristics
High performance
Access time as fast as 60 ns
Program time: 6 μs/word typical using accelerated programming function
Ultra low power consumption (typical values)
2 mA active read current at 1 MHz
10 mA active read current at 5 MHz
200 nA in standby or automatic sleep mode
Cycling endurance: 100K cycles per sector
Data retention: 20 years typica
High performance
Access time as fast as 60 ns
Program time: 6 μs/word typical using accelerated programming function
Ultra low power consumption (typical values)
2 mA active read current at 1 MHz
10 mA active read current at 5 MHz
200 nA in standby or automatic sleep mode
Cycling endurance: 100K cycles per sector
Data retention: 20 years typica