Microchip 1Mbit Parallel Flash Memory 32-Pin PLCC, SST39SF010A-55-4C-NHE
- RS Stock No.:
- 177-9664
- Mfr. Part No.:
- SST39SF010A-55-4C-NHE
- Brand:
- Microchip
Stock information currently inaccessible
- RS Stock No.:
- 177-9664
- Mfr. Part No.:
- SST39SF010A-55-4C-NHE
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Memory Size | 1Mbit | |
| Interface Type | Parallel | |
| Package Type | PLCC | |
| Pin Count | 32 | |
| Organisation | 128K x 8 | |
| Mounting Type | Surface Mount | |
| Cell Type | Split Gate | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Dimensions | 11.5 x 14 x 3.37mm | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 55ns | |
| Number of Words | 128K | |
| Maximum Operating Temperature | +70 °C | |
| Minimum Operating Temperature | 0 °C | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Memory Size 1Mbit | ||
Interface Type Parallel | ||
Package Type PLCC | ||
Pin Count 32 | ||
Organisation 128K x 8 | ||
Mounting Type Surface Mount | ||
Cell Type Split Gate | ||
Minimum Operating Supply Voltage 4.5 V | ||
Maximum Operating Supply Voltage 5.5 V | ||
Dimensions 11.5 x 14 x 3.37mm | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 55ns | ||
Number of Words 128K | ||
Maximum Operating Temperature +70 °C | ||
Minimum Operating Temperature 0 °C | ||
- COO (Country of Origin):
- US
The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply.
Single 4.5-5.5V Read and Write Operations
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 μA (typical)
Sector-Erase Capability– Uniform 4 KByte sectors
Fast Read Access Time:– 55 ns– 70 ns
Latched Address and Data
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 μA (typical)
Sector-Erase Capability– Uniform 4 KByte sectors
Fast Read Access Time:– 55 ns– 70 ns
Latched Address and Data
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling