Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin WSON, AS25F3128MQ-6WINTR
- RS Stock No.:
- 338-525
- Mfr. Part No.:
- AS25F3128MQ-6WINTR
- Brand:
- Alliance Memory
Subtotal (1 reel of 4000 units)*
£4,232.00
(exc. VAT)
£5,080.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 16 February 2026
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Units | Per unit | Per Reel* |
---|---|---|
4000 + | £1.058 | £4,232.00 |
*price indicative
- RS Stock No.:
- 338-525
- Mfr. Part No.:
- AS25F3128MQ-6WINTR
- Brand:
- Alliance Memory
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Alliance Memory | |
Memory Size | 128Mbit | |
Interface Type | Serial | |
Package Type | WSON | |
Pin Count | 8 | |
Cell Type | NOR | |
Select all | ||
---|---|---|
Brand Alliance Memory | ||
Memory Size 128Mbit | ||
Interface Type Serial | ||
Package Type WSON | ||
Pin Count 8 | ||
Cell Type NOR | ||
- COO (Country of Origin):
- TW
The Alliance Memory 128M-bit interface Flash memory device designed for operating on a single power supply from 2.7 to 3.6V with current consumption as low as
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
Speed 166MHz
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8L WSON package 5x6mm
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8L WSON package 5x6mm
Related links
- Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin SOP, AS25F3128MQ-6SIN
- Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin SOP, AS25F3128MQ-6SINTR
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