STMicroelectronics M24M01-RMN6P, 1 MB EEPROM, 500 ns 8-Pin SO-8 Serial-I2C

Bulk discount available

Subtotal (1 pack of 5 units)*

£5.19

(exc. VAT)

£6.23

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,070 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5£1.038£5.19
10 - 20£0.914£4.57
25 - 45£0.896£4.48
50 - 70£0.878£4.39
75 +£0.864£4.32

*price indicative

Packaging Options:
RS Stock No.:
196-1987
Mfr. Part No.:
M24M01-RMN6P
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

EEPROM

Memory Size

1MB

Interface Type

Serial-I2C

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Clock Frequency

1MHz

Organisation

128K x 8 bit

Minimum Supply Voltage

1.8V

Number of Bits per Word

8

Maximum Supply Voltage

5.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

No

Height

1.75mm

Series

M24M01-A125

Length

5mm

Width

150 mm

Supply Current

2mA

Maximum Random Access Time

500ns

Data Retention

200year

Distrelec Product Id

304-38-751

Number of Words

128k

Automotive Standard

AEC-Q100

COO (Country of Origin):
CN
The M24M01 is a 1 Mbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 128 K x 8 bits.

The M24M01-R can operate with a supply voltage from 1.8 V to 5.5 V, and the M24M01-DF can operate with a supply voltage from 1.7 V to 5.5 V, over an ambient temperature range of –40 °C / +85 °C.

Compatible with all I2C bus modes:

1 MHz

400 kHz

100 kHz

Memory array:

1 Mbit (128 Kbyte) of EEPROM

Page size: 256 byte

Additional Write lockable page (M24M01-D order codes)

Single supply voltage and high speed:

1 MHz clock from 1.7 V to 5.5 V

Write:

Byte Write within 5 ms

Page Write within 5 ms

Operating temperature range:

from -40 °C up to +85 °C

Random and sequential Read modes

Write protect of the whole memory array

Enhanced ESD/Latch-Up protection

More than 4 million Write cycles

More than 200-years data retention

Related links