High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage.

Features:
Single 3.3V ± 10% Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128 Byte
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time – 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation:
15 mA Active Current
20 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 105 Cycles
Data Retention: 10 Years
Byte-Wide Pinout
Industrial Temperature Range
Green (Pb/Halide-free) Packaging Option Only